Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry: A Correlation of Conductivity and Bandgap Energy Measurements

Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry: A Correlation of Conductivity and Bandgap Energy Measurements

The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of...

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Bibliographic Details
Main Authors: Rosario Pereiro, David Gomez, Jose Luis Menéndez, Armando Menéndez, Olaya Lorenzo, Pascal Sánchez, Beatriz Fernández
Format: Article
Language:English
Published: MDPI AG 2011-03-01
Series:International Journal of Molecular Sciences
Subjects:
thin film solar cells
hydrogenated amorphous silicon
bandgap energy
ellipsometry
depth profiling analysis
glow discharge optical emission spectrometry
Online Access:http://www.mdpi.com/1422-0067/12/4/2200/

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http://www.mdpi.com/1422-0067/12/4/2200/

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