Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

GaN-based laser diodes (LDs) with different barrier layers are investigated by using simulation and experimental methods. it is found that the absorption loss always decreases with the increasing indium content of the InGaN barrier layer in InGaN/InGaN multiquantum well (MQW) LDs, It leads to an inc...

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Bibliographic Details
Main Authors: Jing Yang, Degang Zhao, Zongshum Liu, De-Sheng Jiang, Jianjun Zhu, Ping Chen, Feng Liang, S. T. Liu, Wei Liu, Yao Xing, Mo Li
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Suppression effect
optical field
leakage of carriers
laser diodes.
Online Access:https://ieeexplore.ieee.org/document/8419238/

Internet

https://ieeexplore.ieee.org/document/8419238/

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