Devices based on series-connected Schottky junctions and β-Ga<sub>2</sub>O<sub>3</sub>/SiC heterojunctions characterized as hydrogen sensors
Field-effect hydrogen gas sensor devices were fabricated with the structure of a series connection between Schottky junctions and β-Ga<sub>2</sub>O<sub>3</sub>/6H-SiC heterojunctions. β-Ga<sub>2</sub>O<sub>3</sub> thin films were deposited on n-type an...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Copernicus Publications
2014-10-01
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| Series: | Journal of Sensors and Sensor Systems |
| Online Access: | http://www.j-sens-sens-syst.net/3/231/2014/jsss-3-231-2014.pdf |
| Summary: | Field-effect hydrogen gas sensor devices were fabricated with the structure
of a series connection between Schottky junctions and β-Ga<sub>2</sub>O<sub>3</sub>/6H-SiC heterojunctions. β-Ga<sub>2</sub>O<sub>3</sub> thin
films were deposited on n-type and p-type 6H-SiC substrates by gallium
evaporation in oxygen plasma. These devices have rectifying properties and
were characterized as hydrogen sensors by a Pt electrode. The hydrogen-sensing
properties of both devices were measured in the range of 300–500 °C. The Pt/Ga<sub>2</sub>O<sub>3</sub>/n-SiC device revealed hydrogen-sensing
properties as conventional Schottky diode-type devices. The forward current
of the Pt/Ga<sub>2</sub>O<sub>3</sub>/p-SiC device was significantly increased under
exposure to hydrogen. The behaviors of hydrogen sensing of the
devices were explained using band diagrams of the Pt/Ga<sub>2</sub>O<sub>3</sub>/SiC
structure biased in the forward and reverse directions. |
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| ISSN: | 2194-8771 2194-878X |