Devices based on series-connected Schottky junctions and β-Ga<sub>2</sub>O<sub>3</sub>/SiC heterojunctions characterized as hydrogen sensors

Devices based on series-connected Schottky junctions and β-Ga<sub>2</sub>O<sub>3</sub>/SiC heterojunctions characterized as hydrogen sensors

Field-effect hydrogen gas sensor devices were fabricated with the structure of a series connection between Schottky junctions and β-Ga<sub>2</sub>O<sub>3</sub>/6H-SiC heterojunctions. β-Ga<sub>2</sub>O<sub>3</sub> thin films were deposited on n-type an...

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Bibliographic Details
Main Authors:	S. Nakagomi, K. Yokoyama, Y. Kokubun
Format:	Article
Language:	English
Published:	Copernicus Publications 2014-10-01
Series:	Journal of Sensors and Sensor Systems
Online Access:	http://www.j-sens-sens-syst.net/3/231/2014/jsss-3-231-2014.pdf

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