Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon
One-dimensional periodic surface structures were formed by femtosecond laser irradiation of amorphous hydrogenated silicon (a-Si:H) films. The a-Si:H laser processing conditions influence on the periodic relief formation as well as correlation of irradiated surfaces structural properties with their...
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doaj-7b5cc0fb96a34dcaac58ba64a40420542020-12-27T00:01:18ZengMDPI AGNanomaterials2079-49912021-12-0111424210.3390/nano11010042Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous SiliconDmitrii Shuleiko0Mikhail Martyshov1Dmitrii Amasev2Denis Presnov3Stanislav Zabotnov4Leonid Golovan5Andrei Kazanskii6Pavel Kashkarov7Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaFaculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilova st., 119991 Moscow, RussiaFaculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaFaculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaFaculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaFaculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaFaculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, RussiaOne-dimensional periodic surface structures were formed by femtosecond laser irradiation of amorphous hydrogenated silicon (a-Si:H) films. The a-Si:H laser processing conditions influence on the periodic relief formation as well as correlation of irradiated surfaces structural properties with their electrophysical properties were investigated. The surface structures with the period of 0.88 and 1.12 μm were fabricated at the laser wavelength of 1.25 μm and laser pulse number of 30 and 750, respectively. The orientation of the surface structure is defined by the laser polarization and depends on the concentration of nonequilibrium carriers excited by the femtosecond laser pulses in the near-surface region of the film, which affects a mode of the excited surface electromagnetic wave which is responsible for the periodic relief formation. Femtosecond laser irradiation increases the a-Si:H films conductivity by 3 to 4 orders of magnitude, up to 1.2 × 10<sup>−5</sup> S∙cm, due to formation of Si nanocrystalline phase with the volume fraction from 17 to 28%. Dark conductivity and photoconductivity anisotropy, observed in the irradiated a-Si:H films is explained by a depolarizing effect inside periodic microscale relief, nonuniform crystalline Si phase distribution, as well as different carrier mobility and lifetime in plane of the studied samples along and perpendicular to the laser-induced periodic surface structures orientation, that was confirmed by the measured photoconductivity and absorption coefficient spectra.https://www.mdpi.com/2079-4991/11/1/42laser-induced periodic surface structuressilicon nanocrystalssurface plasmon-polaritonsfemtosecond laser pulsesamorphous siliconelectrophysical measurements |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Dmitrii Shuleiko Mikhail Martyshov Dmitrii Amasev Denis Presnov Stanislav Zabotnov Leonid Golovan Andrei Kazanskii Pavel Kashkarov |
spellingShingle |
Dmitrii Shuleiko Mikhail Martyshov Dmitrii Amasev Denis Presnov Stanislav Zabotnov Leonid Golovan Andrei Kazanskii Pavel Kashkarov Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon Nanomaterials laser-induced periodic surface structures silicon nanocrystals surface plasmon-polaritons femtosecond laser pulses amorphous silicon electrophysical measurements |
author_facet |
Dmitrii Shuleiko Mikhail Martyshov Dmitrii Amasev Denis Presnov Stanislav Zabotnov Leonid Golovan Andrei Kazanskii Pavel Kashkarov |
author_sort |
Dmitrii Shuleiko |
title |
Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon |
title_short |
Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon |
title_full |
Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon |
title_fullStr |
Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon |
title_full_unstemmed |
Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon |
title_sort |
fabricating femtosecond laser-induced periodic surface structures with electrophysical anisotropy on amorphous silicon |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2021-12-01 |
description |
One-dimensional periodic surface structures were formed by femtosecond laser irradiation of amorphous hydrogenated silicon (a-Si:H) films. The a-Si:H laser processing conditions influence on the periodic relief formation as well as correlation of irradiated surfaces structural properties with their electrophysical properties were investigated. The surface structures with the period of 0.88 and 1.12 μm were fabricated at the laser wavelength of 1.25 μm and laser pulse number of 30 and 750, respectively. The orientation of the surface structure is defined by the laser polarization and depends on the concentration of nonequilibrium carriers excited by the femtosecond laser pulses in the near-surface region of the film, which affects a mode of the excited surface electromagnetic wave which is responsible for the periodic relief formation. Femtosecond laser irradiation increases the a-Si:H films conductivity by 3 to 4 orders of magnitude, up to 1.2 × 10<sup>−5</sup> S∙cm, due to formation of Si nanocrystalline phase with the volume fraction from 17 to 28%. Dark conductivity and photoconductivity anisotropy, observed in the irradiated a-Si:H films is explained by a depolarizing effect inside periodic microscale relief, nonuniform crystalline Si phase distribution, as well as different carrier mobility and lifetime in plane of the studied samples along and perpendicular to the laser-induced periodic surface structures orientation, that was confirmed by the measured photoconductivity and absorption coefficient spectra. |
topic |
laser-induced periodic surface structures silicon nanocrystals surface plasmon-polaritons femtosecond laser pulses amorphous silicon electrophysical measurements |
url |
https://www.mdpi.com/2079-4991/11/1/42 |
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