A novel surface area to volume ratio estimation technique for nanohemisphere contacted Schottky barrier structures
Nanostructured metal-semiconductor interfaces, also known as Schottky barriers, exhibit remarkable electronic properties. The surface morphology of nanostructure contacted Schottky barriers has a significant effect on its current-voltage (I-V) characteristics, which is crucial for high-performance d...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5039722 |