Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology

Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology

In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio...

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Bibliographic Details
Main Authors: N. Wakama, D. Okabayashi, T. Noda, K. Sasagawa, T. Tokuda, K. Kakiuchi, J. Ohta
Format: Article
Language:English
Published: Wiley 2013-09-01
Series:The Journal of Engineering
Subjects:
CMOS image sensors
complementary metal-oxide semiconductor image sensor
CMOS image sensor
on-chip polarisers
metal wire grids
line-space widths
electrical crosstalk
guard ring structure
polarisation imaging
size 65 nm
Online Access:http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0033

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http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0033

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