Target Voltage Hysteresis Behavior and Control Point in the Preparation of Aluminum Oxide Thin Films by Medium Frequency Reactive Magnetron Sputtering

Target Voltage Hysteresis Behavior and Control Point in the Preparation of Aluminum Oxide Thin Films by Medium Frequency Reactive Magnetron Sputtering

Aluminum oxide thin films were prepared by medium frequency reactive magnetron sputtering. The target voltage hysteresis behavior under different argon partial pressure and target power conditions were studied. The results indicate that the target voltage hysteresis loop of aluminum oxide thin film...

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Bibliographic Details
Main Authors: Qingfu Wang, Liping Fang, Qinghe Liu, Lin Chen, Qinguo Wang, Xiandong Meng, Hong Xiao
Format: Article
Language:English
Published: MDPI AG 2018-04-01
Series:Coatings
Subjects:
aluminum oxide
thin film
medium frequency
magnetron sputtering
target voltage
hysteresis loop
Online Access:http://www.mdpi.com/2079-6412/8/4/146

Internet

http://www.mdpi.com/2079-6412/8/4/146

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