Design of an erasable spintronics memory based on current-path-dependent field-free spin orbit torque

Design of an erasable spintronics memory based on current-path-dependent field-free spin orbit torque

Spin orbit torque magnetic random access memory (SOT-MRAM) has attracted massive research interests due to its promising application potential in high-speed computing systems (e.g. upper level caches). Here we propose an erasable spintronics memory based on a novel field-free SOT switching mechanism...

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Bibliographic Details
Main Authors: Haochang Zhou, Chao Wang, Zuwei Li, Zhaohao Wang, Tongxi Liu, Bi Wu, Weisheng Zhao
Format: Article
Language:English
Published: AIP Publishing LLC 2020-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5130050

Internet

http://dx.doi.org/10.1063/1.5130050

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