High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze...

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Bibliographic Details
Main Authors: Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, Bernard Plaçais
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Applied Sciences
Subjects:
graphene transistor
velocity saturation
high-frequency
dirac pinch-off
contact gating
Online Access:https://www.mdpi.com/2076-3417/10/2/446

Internet

https://www.mdpi.com/2076-3417/10/2/446

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