Is vacuum annealing converts p-type single wall carbon nanotube field effect transistor (in air) to n-type (in vacuum) is universially true (?)
Our study on nickel silicide and gold contacted single-wall-carbon-nanotube field effect transistors (SWCN-FETs) is in sharp contrast to earlier published reports of type conversion in SWCN-FETs (from p- to n-) when cycled between air and vacuum, and indicates that (1) band gap of SWCN (2) the exten...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Applied Science Innovations Private Limited
2009-05-01
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| Series: | Carbon: Science and Technology |
| Subjects: | |
| Online Access: | http://www.applied-science-innovations.com/cst-web-site/cst-2-2/CST%20-%2023.pdf |