STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods. The paper provides a comparative analysis of the advantages of bipolar static induction transistor compared to the bipolar power trans...

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Bibliographic Details
Main Authors: T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva
Format: Article
Language:Russian
Published: Daghestan State Technical University 2016-12-01
Series:Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
Subjects:
resistance
transistor
device
the cell
electrical performance
parameters
Online Access:https://vestnik.dgtu.ru/jour/article/view/305

Internet

https://vestnik.dgtu.ru/jour/article/view/305

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