Investigation of Changes in Resistivity of n Si with Temperature and Uniaxial Stress
<span>In this work the changes in resistivity of n Si with temperature and uniaxial stress X, oriented both in <100> and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of </span><img src="http:...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2018-01-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/2247 |