Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

In this work, a capacitorless one-transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) metal–oxide–semiconductor field-effect transistor was designed and analyzed through a technology computer-aided design (TCAD) simulation. A poly-Si t...

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Bibliographic Details
Main Authors: Sang Ho Lee, Won Douk Jang, Young Jun Yoon, Jae Hwa Seo, Hye Jin Mun, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, In Man Kang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Polycrystalline silicon
one-transistor dynamic random access memory
grain boundaries
metal–oxide–semiconductor field-effect transistor
one transistor dynamic random access memory
dualgate
Online Access:https://ieeexplore.ieee.org/document/9387306/

Internet

https://ieeexplore.ieee.org/document/9387306/

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