Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4967287 |