Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb...

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Main Authors: Charith Jayanada Koswaththage, Tatsuya Okada, Takashi Noguchi, Shinichi Taniguchi, Shokichi Yoshitome
Format: Article
Language:English
Published: AIP Publishing LLC 2016-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4967287
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spelling doaj-7d5f8c1eba2d4b8e90cf9791a3deebfb2020-11-25T00:47:38ZengAIP Publishing LLCAIP Advances2158-32262016-11-01611115303115303-810.1063/1.4967287016611ADVUltra-high carrier mobility InSb film by rapid thermal annealing on glass substrateCharith Jayanada Koswaththage0Tatsuya Okada1Takashi Noguchi2Shinichi Taniguchi3Shokichi Yoshitome4Graduate School of Science and Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanGraduate School of Science and Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanGraduate School of Science and Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, Japane-tec Inc., Sadowara, Miyazaki 880-0303, Japane-tec Inc., Sadowara, Miyazaki 880-0303, JapanInSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.http://dx.doi.org/10.1063/1.4967287
collection DOAJ
language English
format Article
sources DOAJ
author Charith Jayanada Koswaththage
Tatsuya Okada
Takashi Noguchi
Shinichi Taniguchi
Shokichi Yoshitome
spellingShingle Charith Jayanada Koswaththage
Tatsuya Okada
Takashi Noguchi
Shinichi Taniguchi
Shokichi Yoshitome
Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
AIP Advances
author_facet Charith Jayanada Koswaththage
Tatsuya Okada
Takashi Noguchi
Shinichi Taniguchi
Shokichi Yoshitome
author_sort Charith Jayanada Koswaththage
title Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
title_short Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
title_full Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
title_fullStr Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
title_full_unstemmed Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
title_sort ultra-high carrier mobility insb film by rapid thermal annealing on glass substrate
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-11-01
description InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.
url http://dx.doi.org/10.1063/1.4967287
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AT tatsuyaokada ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate
AT takashinoguchi ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate
AT shinichitaniguchi ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate
AT shokichiyoshitome ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate
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