Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives

Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives

Abstract High-quality CH3NH3PbI 3−x Cl x (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistiv...

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Bibliographic Details
Main Authors: Fengzhen Lv, Kang Ling, Tingting Zhong, Fuchi Liu, Xiaoguang Liang, Changming Zhu, Jun Liu, Wenjie Kong
Format: Article
Language:English
Published: SpringerOpen 2020-06-01
Series:Nanoscale Research Letters
Subjects:
Tri-state resistive switching behavior
KCl-doped MAPIC films
Iodine vacancies
Trap-controlled SCLC conduction mechanism
Online Access:http://link.springer.com/article/10.1186/s11671-020-03356-3

Internet

http://link.springer.com/article/10.1186/s11671-020-03356-3

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