Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO<sub>2</sub> field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with minimum 8 nm channel thickn...

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Bibliographic Details
Main Authors: Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Junctionless
ferroelectric field effect transistor
non-volatile memory
ferroelectric HfO₂
indium-gallium-zinc-oxide (IGZO)
Online Access:https://ieeexplore.ieee.org/document/9139202/

Internet

https://ieeexplore.ieee.org/document/9139202/

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