Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

Abstract The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending...

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Bibliographic Details
Main Authors: Tian Li Duan, Ji Sheng Pan, Ning Wang, Kai Cheng, Hong Yu Yu
Format: Article
Language:English
Published: SpringerOpen 2017-08-01
Series:Nanoscale Research Letters
Subjects:
Surface polarization
Interfacial layer
ARXPS
GaN heterostructure
Online Access:http://link.springer.com/article/10.1186/s11671-017-2271-x

Internet

http://link.springer.com/article/10.1186/s11671-017-2271-x

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