Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO<sub>2</sub> Thin-Film Transistors

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO<sub>2</sub> Thin-Film Transistors

In this study, sol–gel-processed Li-doped SnO<sub>2</sub>-based thin-film transistors (TFTs) were fabricated on SiO<sub>2</sub>/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding...

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Bibliographic Details
Main Authors: Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Jaewon Jang
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Electronics
Subjects:
sol–gel
Li doping
thin-film transistor
SnO<sub>2</sub>
negative bias stability
Online Access:https://www.mdpi.com/2079-9292/10/14/1629

Internet

https://www.mdpi.com/2079-9292/10/14/1629

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