Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW...

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Bibliographic Details
Main Authors: Nigamananda Samal, Yuri G. Sadofyev
Format: Article
Language:English
Published: MDPI AG 2010-02-01
Series:Materials
Subjects:
molecular beam epitaxy
quantum wells
antimonide
laser diodes
Online Access:http://www.mdpi.com/1996-1944/3/3/1497/

Internet

http://www.mdpi.com/1996-1944/3/3/1497/

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