Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW...
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/3/3/1497/ |
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doaj-7e78a84c17ea4906b232dd4f815376632020-11-25T00:59:40ZengMDPI AGMaterials1996-19442010-02-01331497150810.3390/ma3031497Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAsNigamananda SamalYuri G. SadofyevAn in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation. http://www.mdpi.com/1996-1944/3/3/1497/molecular beam epitaxyquantum wellsantimonidelaser diodes |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Nigamananda Samal Yuri G. Sadofyev |
| spellingShingle |
Nigamananda Samal Yuri G. Sadofyev Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs Materials molecular beam epitaxy quantum wells antimonide laser diodes |
| author_facet |
Nigamananda Samal Yuri G. Sadofyev |
| author_sort |
Nigamananda Samal |
| title |
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs |
| title_short |
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs |
| title_full |
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs |
| title_fullStr |
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs |
| title_full_unstemmed |
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs |
| title_sort |
photoluminescence and band alignment of strained gaassb/gaas qw structures grown by mbe on gaas |
| publisher |
MDPI AG |
| series |
Materials |
| issn |
1996-1944 |
| publishDate |
2010-02-01 |
| description |
An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation. |
| topic |
molecular beam epitaxy quantum wells antimonide laser diodes |
| url |
http://www.mdpi.com/1996-1944/3/3/1497/ |
| work_keys_str_mv |
AT nigamanandasamal photoluminescenceandbandalignmentofstrainedgaassbgaasqwstructuresgrownbymbeongaas AT yurigsadofyev photoluminescenceandbandalignmentofstrainedgaassbgaasqwstructuresgrownbymbeongaas |
| _version_ |
1725216872046002176 |