Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM Cell
In this paper, we propose an asymmetric radiation-hardened 10T (AS10T) SRAM cell and analyze the impact of bias temperature instabilities (BTI) on the single event upset of the modified structure. For this, we make use of a read decoupled circuit to improve the stability of the reading cycle, and a...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/2/256 |