Coupling effect in field Hall elements based on thin-film SOI MOS transistors
The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2020-12-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/65567/download/pdf/ |