An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device
Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2014-08-01
|
| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/14/8/14553 |
| Summary: | Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of the ionization radiation sensing response. The change of threshold voltage VT for a MAHAOS device after gamma ray exposure had a strong correlation to the total ionization dose (TID) of gamma radiation up to at least 5 Mrad TID. In this paper, the gamma radiation response performances of the pre-programmed and virgin (non-pre-programmed) MAHAOS devices are presented. The experimental data show that the change of VT for the pre-programmed MAHAOS device with gamma irradiation is very significant. The data of pre-programmed MAHAOS devices written by 5 Mrad TID of gamma radiation was also stable for a long time with data storage. The sensing of gamma radiation by pre-programmed MAHAOS devices with high k stack gate dielectric reported in this study has demonstrated their potential application for non-volatile ionizing radiation sensing technology in the future. |
|---|---|
| ISSN: | 1424-8220 |