Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition
A remote plasma enhanced chemical vapor deposition (CVD) process using GeH4, SiH4, and SnCl4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (100) substrates, without the need for buffer layers. X-ray diffraction measurements of a representative Ge1–xSnx sample w...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
Frontiers Media S.A.
2020-03-01
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Series: | Frontiers in Materials |
Subjects: | |
Online Access: | https://www.frontiersin.org/article/10.3389/fmats.2020.00044/full |