Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal gate resistance technique. We clarify that the SH...

Full description

Bibliographic Details
Main Authors: Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Self-heating effect
ultra-thin BOX
four-terminal gate resistance technique
Online Access:https://ieeexplore.ieee.org/document/7469833/

Internet

https://ieeexplore.ieee.org/document/7469833/

Similar Items