Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as non...

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Bibliographic Details
Main Authors: Kęstutis Ikamas, Ignas Nevinskas, Arūnas Krotkus, Alvydas Lisauskas
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Sensors
Subjects:
FET
THz
Online Access:https://www.mdpi.com/1424-8220/18/11/3735