Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as non...
Main Authors: | Kęstutis Ikamas, Ignas Nevinskas, Arūnas Krotkus, Alvydas Lisauskas |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-11-01
|
Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/18/11/3735 |
Similar Items
-
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor
by: Kęstutis Ikamas, et al.
Published: (2021-01-01) -
Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
by: Elham Javadi, et al.
Published: (2021-04-01) -
Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
by: Dovilė Čibiraitė-Lukenskienė, et al.
Published: (2020-07-01) -
All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon
by: Kęstutis Ikamas, et al.
Published: (2021-08-01) -
Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
by: Vitaly Leonidovich Malevich, et al.
Published: (2021-06-01)