Gas Sensing Approaches Based on WO3 Nanowire-Back Gated Devices
This paper present a new design and configuration of metal oxide gas sensor based on back-gated device that can operate at low temperature. Gold electrodes patterned onto an oxidized, heavily doped, p-type silicon substrate were designed and fabricated at a wafer level. The Au—electrodes were used a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-08-01
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| Series: | Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-3900/1/4/437 |