Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a...

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Bibliographic Details
Main Authors: Cedric Nanmeni Bondja, Zhansong Geng, Ralf Granzner, Jörg Pezoldt, Frank Schwierz
Format: Article
Language:English
Published: MDPI AG 2016-01-01
Series:Electronics
Subjects:
graphene
graphene transistor
GNR MOSFET
simulation
Online Access:http://www.mdpi.com/2079-9292/5/1/3

Internet

http://www.mdpi.com/2079-9292/5/1/3

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