Core-level shifts in x-ray photoelectron spectroscopy of arsenic defects in silicon crystal: A first-principles study
We systematically investigated the arsenic (As) 3d core-level x-ray photoelectron spectroscopy (XPS) binding energy and formation energy for As defects in silicon by first-principles calculation with a high accuracy of 0.1 eV by careful evaluation of the supercell size. For As, we adopt a pseudopote...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0025316 |