Oxygen desorption kinetics of ZnO nanorod–gated AlGaN/GaN HEMT-based UV photodetectors
In this study, we investigated the effect of gate length and surface area of the ZnO ultraviolet (UV) absorbing structure on the transient characteristics of AlGaN/GaN HEMT based UV photodetectors. The gate-areas (2, 6 and 18 μm lengths with same width of 100 μm) of AlGaN/GaN HEMTs are covered with...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5040295 |