Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces
Abstract The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2....
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-05-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-3020-0 |