Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO<sub>2</sub>-Al<sub>2</sub>O<sub>3</sub>/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition
Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO<sub>2</sub>-Al<sub>2</sub>O<sub>3</sub> laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler−No...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-11-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/9/11/720 |