Analysis and Simulations of Hybrid Memory Scheme Based on Memristors
The investigation of new memory schemes is significant for future generations of electronic devices. The purpose of this research is to present a detailed analysis of the processes in the memory elements of a memory section with memristors and isolating Metal Oxide Semiconductor (MOS) transistors. F...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-11-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/7/11/289 |