Extending Non-Volatile Operation to DRAM Cells
This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation. Two existing DRAM cells (namely the 3T1D and B3T cells) are utilized as volatile cores; a RRAM circuitry (consisting of an a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6651631/ |