Asymmetric dual-grating gates graphene FET for detection of terahertz radiations
A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO2/Si substrate...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-06-01
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| Series: | APL Photonics |
| Online Access: | http://dx.doi.org/10.1063/5.0007249 |