Reference samples of the silicon single crystalls free carrier recombination lifetime
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photoconductivity decay measurements (High freque...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Ural Research Institute of Metrology
2017-05-01
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| Series: | Standartnye Obrazcy |
| Subjects: | |
| Online Access: | https://www.rmjournal.ru/jour/article/view/45 |