Reference samples of the silicon single crystalls free carrier recombination lifetime

• Main Authors: S. P. Kobeleva, I. M. Anfimov, I. V. Schemerov, L. P. Kholodny, I. V. Borzikh, V. V. Ptashinsty
• Format: Article
• Language: Russian
• Published: Ural Research Institute of Metrology 2017-05-01
• Series: Standartnye Obrazcy
• Subjects: монокристаллический кремний; бесконтактный свч-метод; бесконтактный вч-метод; время жизни неравновесных носителей заряда; спад фотопроводимости; single crystal silicon; contactless д-pcd method; contactless high frequence method; carrier recombination lifetime; photoconductivity decay
• Online Access: https://www.rmjournal.ru/jour/article/view/45
• ISSN: 2077-1177

A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photoconductivity decay measurements (High frequence and /-PCD). Effective recombination lifetime value in the range 1-1500 /is were achieved by changes of the sample thickness from 0,4 to 10 mm. Bulk recombination lifetime was calculated using the relation between the effective recombination lifetime and the sample thickness. It was shown that random and systematic errors for two methods are of the same order.