Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x
We report on transparent thin film field effect transistors (TFTs) based on polycrystalline SnO2−x and epitaxial SnO2−x. Polycrystalline SnO2−x TFTs of the top and the bottom gate geometries exhibited high mobility values of 145.7 cm2/V s and 160.0 cm2/V s, respectively. However, our polycrystalline...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5143468 |