Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boun...

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Bibliographic Details
Main Authors: Filippo Giannazzo, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Nanomaterials
Subjects:
conductive atomic force microscopy
transition metal dichalcogenides
Schottky barrier
conductivity
heterostructures
Online Access:https://www.mdpi.com/2079-4991/10/4/803

Internet

https://www.mdpi.com/2079-4991/10/4/803

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