Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydroge...

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Bibliographic Details
Main Authors: Xiumei Zhang, Haiyan Nan, Shaoqing Xiao, Xi Wan, Xiaofeng Gu, Aijun Du, Zhenhua Ni, Kostya (Ken) Ostrikov
Format: Article
Language:English
Published: Nature Publishing Group 2019-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-08468-8