Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
The gate-all-around (GAA) nanosheet (NS) junctionless transistor (JLT) is an attractive candidate for advanced technology nodes in CMOS scaling. Here, the channel width-dependent transconductance (gm) degradation and threshold voltage (Vth) shift of GAA NS JLTs were investigated via numerical simula...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0035460 |