Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed a...

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Bibliographic Details
Main Authors: Shiben Hu, Honglong Ning, Kuankuan Lu, Zhiqiang Fang, Yuzhi Li, Rihui Yao, Miao Xu, Lei Wang, Junbiao Peng, Xubing Lu
Format: Article
Language:English
Published: MDPI AG 2018-03-01
Series:Nanomaterials
Subjects:
IGZO
thin film transistors
indium
copper
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Online Access:http://www.mdpi.com/2079-4991/8/4/197

Internet

http://www.mdpi.com/2079-4991/8/4/197

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