Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity
We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattic...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4968832 |