Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
The incorporation of In2O3 into Ga2O3 allows for tailoring of the bandgap over a wide range in (InxGa1−x)2O3, and this material is emerging as a candidate in transparent electrodes on optoelectronic devices, heterostructure transistors, photodetectors, and gas sensors. We have measured the band alig...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5110498 |