Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

Abstract Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off‐sta...

Full description

Bibliographic Details
Main Authors: Long Liu, Yi Li, Xiaodi Huang, Jia Chen, Zhe Yang, Kan‐Hao Xue, Ming Xu, Huawei Chen, Peng Zhou, Xiangshui Miao
Format: Article
Language:English
Published: Wiley 2021-08-01
Series:Advanced Science
Subjects:
2D HfSe2
in‐memory computing
low‐power consumption
memristors
oxidation
resistive switching
Online Access:https://doi.org/10.1002/advs.202005038

Internet

https://doi.org/10.1002/advs.202005038

Similar Items