Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts

Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts

Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in...

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Bibliographic Details
Main Authors: Desthieux Anatole, Posada Jorge, Grand Pierre-Philippe, Broussillou Cédric, Bazer-Bachi Barbara, Goaer Gilles, Messou Davina, Bouttemy Muriel, Drahi Etienne, Roca i Cabarrocas Pere
Format: Article
Language:English
Published: EDP Sciences 2020-01-01
Series:EPJ Photovoltaics
Subjects:
silicon solar cell
passivating contact
silicon oxide
μc-si:h
pecvd
xps
passivation
cast-mono
Online Access:https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv190021/pv190021.html

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https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv190021/pv190021.html

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