Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog
Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared for the first time. The comparison is carried out in two material combinations relevant to microelectronics and silicon photonics: Si on an...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5143843 |